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C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor

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    Buy cheap C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor from wholesalers
     
    Buy cheap C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor from wholesalers
    • Buy cheap C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor from wholesalers
    • Buy cheap C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor from wholesalers

    C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor

    Ask Lasest Price
    Brand Name : BonTek
    Model Number : Sapphire (Al2O3)
    Certification : ISO:9001
    Price : Negotiable
    Payment Terms : T/T
    Supply Ability : 10000 pieces/Month
    Delivery Time : 1-4 weeks
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    C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor

    C Plane High Smoothness And High Cleanliness Sapphire Substrate For Semiconductor


    Sapphire wafers are mainly suitable for the research and development of new semiconductor devices, offering high specifications such as high smoothness and high cleanliness in addition to the traditional sapphire substrate standard grades.


    Main Features

    • High strength, high hardness, high wear resistance (hardness second only to diamond)

    • High transmittance (light transmittance in the ultraviolet to infrared range)

    • High corrosion resistance (high tolerance to acid, alkali, plasma)

    • High insulation (insulator, not easy to conduct electricity)

    • High heat resistance (melting point 2050℃) Heat conductivity (40 times of glass)


    Specification

    • Standard size (φ2 ",3 ",4 ",6 ",8 ",12 "), other special size, corner shape and other shapes can be corresponding.

    • Can correspond to a variety of plane orientation: c-plane, r-plane, m-plane, a-plane

    • Double-sided grinding, single-sided grinding

    • Customizable punching


    C Plane High Smoothness And Cleanliness Sapphire Substrate For SemiconductorC Plane High Smoothness And Cleanliness Sapphire Substrate For SemiconductorC Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor


    Crystal Materials99,996% of Al2O3,High Purity, Monocrystalline, Al2O3
    Crystal qualityInclusions, block marks, twins, Color, micro-bubbles and dispersal centers are non-existent
    Diameter2inch3inch4inch5inch ~ 7inch
    50.8± 0.1mm76.2±0.2mm100±0.3mmIn accordance with the provisions of standard production
    Thickness430±15µm550±15µm650±20µmCan be customized by customer
    OrientationC- plane (0001) to M-plane (1-100) or A-plane(1 1-2 0) 0.2±0.1° /0.3±0.1°, R-plane (1-1 0 2), A-plane (1 1-2 0 ), M-plane(1-1 0 0), Any Orientation , Any angle
    Primary flat length16.0±1mm22.0±1.0mm32.5±1.5 mmIn accordance with the provisions of standard production
    Primary flat OrientationA-plane (1 1-2 0 ) ± 0.2°
    TTV≤10µm≤15µm≤20µm≤30µm
    LTV≤10µm≤15µm≤20µm≤30µm
    TIR≤10µm≤15µm≤20µm≤30µm
    BOW≤10µm≤15µm≤20µm≤30µm
    Warp≤10µm≤15µm≤20µm≤30µm
    Front SurfaceEpi-Polished (Ra< 0.2nm)
    Back SurfaceFine ground (Ra=0.5 to 1.2 µm), Epi-Polished (Ra< 0.2nm)
    NoteCan provide high-quality sapphire substrate wafer according to customers' specific requirement

    PHYSICAL PROPERTIES

    Density3.97 g/cm3
    Melting Point2040 degrees C
    Thermal Conductivity27.21 W/(m x K) at 300 K
    Thermal Expansion5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K
    HardnessKnoop 2000 kg/mm 2 with 2000g indenter
    Specific Heat Capacity419 J/(kg x K)
    Dielectric Constant11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz
    Young's Modulus (E)335 GPa
    Shear Modulus (G)148.1 GPa
    Bulk Modulus (K)240 GPa
    Elastic CoefficientsC11=496 C12=164 C13=115
    C33=498 C44=148
    Apparent Elastic Limit275 MPa (40,000 psi)
    Poisson Ratio0.25

    C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor


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    C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor

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